Rutherford Backscattering Spectroscopy (RBS)

Rutherford Backscattering Spectroscopy (RBS) is an ion scattering technique that is used for compositional thin film analysis. RBS is unique in that it allows quantification without the use of reference standards. During an RBS measurement, high-energy (MeV) He++ ions are directed onto a sample and the energy distribution and yield of the backscattered He++ ions at a given angle is recorded. Since the backscattering cross section for each element is known, it is possible to obtain quantitative depth profiles from the RBS spectra (for thin films that are less than 1mm thick). 

Evans Analytical Group® (EAG) has unmatched experience analyzing a wide range of thin films using RBS. This experience benefits all of our customers. Whether we analyze high or low-K dielectrics, metal films, or dopants in silicon or III-IV materials, we tap our broad knowledge base to solve your problem. Plus, you can count on fast turnaround times, accurate data, and person-to-person service, ensuring you understand the analytical test results and what they mean for your material or process.

View Application Notes

Ideal Uses for RBS Analysis		Relevant Industries for RBS Analysis
Thin film composition/thickness Determine areal concentrations (atoms/cm2) Determine film density (when thickness is known)		Aerospace Defense Displays Semiconductor Telecommunications
Strengths of RBS Analysis		Limitations of RBS Analysis
Non-destructive compositional analysis Quantitative without standards Whole wafer analysis (150, 200, 300 mm) as well as irregular and large samples Conductor and insulator analysis Hydrogen measurements (in HFS mode) Low-Z element sensitivity (in NRA mode)		Large analysis area (~2 mm) Useful information limited to top ~1 μm  of samples

Application Notes