Total Reflection X-ray Fluorescence (TXRF)

Total Reflection X-ray Fluorescence (TXRF) utilizes extremely low-angle x-ray excitation of a polished sample surface. The incident angle of the x-ray beam (typically 0.05°) is below the critical angle for the substrate and limits excitation to the outer most surface layers of the sample. The fluorescence photons emitted from the surface atoms are characteristic of the elements present. A highly surface-sensitive technique, TXRF is optimized for analyzing surface metal contamination on semiconductor wafers.

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Ideal Uses for TXRF Analysis		Relevant Industries for TXRF Analysis
Metallic surface contamination on semiconductor wafers		Semiconductor Telecommunication Compound Semiconductors Solar Photovoltaics

Strengths of TXRF Analysis		Limitations of TXRF Analysis
Trace element analysis Survey analysis Quantitative Non-destructive Automated analysis Whole wafer analysis (up to 300 mm)		Cannot detect low-Z elements (Li, Na, Al) Polished surface required for best detection limits

Application Notes

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TXRF Technical Capabilities

Signal Detected:
Fluorescent x-rays from wafer surface

Elements Detected:
S-U

Detection Limits:
10⁹ - 10¹² at/cm²

Depth Resolution:
30 - 80 Angstrom (Sampling Depth)

Imaging/Mapping:
Optional

Lateral Resolution/Probe Size:
~10 mm